دیتاشیت IRF640STRRPBF
مشخصات دیتاشیت
| نام دیتاشیت |
IRF640STRRPBF
|
| حجم فایل |
108.21
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Vishay Intertech IRF640STRRPBF
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
3.1W;130W
-
Total Gate Charge (Qg@Vgs):
70nC@10V
-
Drain Source Voltage (Vdss):
200V
-
Input Capacitance (Ciss@Vds):
1300pF@25V
-
Continuous Drain Current (Id):
18A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
180mΩ@10V,11A
-
Package:
TO-263-2
-
Manufacturer:
Vishay Intertech
